Effect of Sb doping on point defect ensemble in MOVPE - GaAsPASKOVA, T; YAKIMOVA, R.Solid state communications. 1993, Vol 87, Num 12, pp 1125-1127, issn 0038-1098Article

Step-bunching in SiC epitaxy: anisotropy and influence of growth temperatureSYVÄJÄRVI, M; YAKIMOVA, R; JANZEN, E et al.Journal of crystal growth. 2002, Vol 236, Num 1-3, pp 297-304, issn 0022-0248Article

Anisotropic etching of SiCSYVÄJÄRVI, M; YAKIMOVA, R; JANZEN, E et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 9, pp 3519-3522, issn 0013-4651Article

Defect origin and development in sublimation grown SiC boulesTUOMINEN, M; YAKIMOVA, R; VEHANEN, A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 57, Num 3, pp 228-233, issn 0921-5107Article

Step-bunching in 6H-SiC growth by sublimation epitaxySYVÄJÄRVI, M; YAKIMOVA, R; JANZEN, E et al.Journal of physics. Condensed matter (Print). 1999, Vol 11, Num 49, pp 10019-10024, issn 0953-8984Conference Paper

On the scandium distribution in indium arsenide crystals grown by the Czochralski methodLILOV, S. K; YAKIMOVA, R. T.Crystal research and technology (1979). 1983, Vol 18, Num 11, pp 1385-1389, issn 0232-1300Article

K/graphite : Uniform energy shifts of graphite valence statesKIHIGREN, T; BALASUBRAMANIAN, T; WALLDEN, L et al.Surface science. 2006, Vol 600, Num 5, pp 1160-1164, issn 0039-6028, 5 p.Article

Microstructural characterization of very thick freestanding 3C-SiC wafersPOLYCHRONIADIS, E; SYVÄJÄRVI, M; YAKIMOVA, R et al.Journal of crystal growth. 2004, Vol 263, Num 1-4, pp 68-75, issn 0022-0248, 8 p.Article

Characterization of MOVPE-grown GaAs layers by C-V analysisPASKOVA, T; YAKIMOVA, R; VALCHEVA, E et al.Applied physics. A, Solids and surfaces. 1993, Vol 56, Num 1, pp 69-72, issn 0721-7250Article

Layer quality of Sb-doped GaAs grown by metalorganic vapor phase epitaxyYAKIMOVA, R; PASKOVA, T; IVANOV, I et al.Journal of crystal growth. 1993, Vol 129, Num 1-2, pp 143-148, issn 0022-0248Article

Behavior of an EL5-like defect in metalorganic vapor-phase epitaxial GaAs:SbYAKIMOVA, R; PASKOVA, T; HARDALOV, C et al.Journal of applied physics. 1993, Vol 74, Num 10, pp 6170-6173, issn 0021-8979Article

Investigation of residual oxide layers on GaAs surfacesMARINOVA, T; KRASTEV, V; YAKIMOVA, R et al.Crystal research and technology (1979). 1992, Vol 27, Num 6, pp 809-815, issn 0232-1300Article

Luminescence anisotropy of ZnO microrodsKHRANOVSKYY, V; LAZORENKO, V; LASHKAREV, G et al.Journal of luminescence. 2012, Vol 132, Num 10, pp 2643-2647, issn 0022-2313, 5 p.Article

Surface morphology effects on the light-controlled wettability of ZnO nanostructuresKHRANOVSKYY, V; EKBLAD, T; YAKIMOVA, R et al.Applied surface science. 2012, Vol 258, Num 20, pp 8146-8152, issn 0169-4332, 7 p.Article

Cross-sectional cleavages of SiC for evaluation of epitaxial layersSYVÄJÄRVI, M; YAKIMOVA, R; JANZEN, E et al.Journal of crystal growth. 2000, Vol 208, Num 1-4, pp 409-415, issn 0022-0248Article

Electrical properties of n-Zn_0.94Cd_0.06O/p-SiC heterostructuresSHTEPLIUK, I; KHRANOVSKYY, V; LASHKAREV, G et al.Solid-state electronics. 2013, Vol 81, pp 72-77, issn 0038-1101, 6 p.Article

Room temperature luminescence properties of fluorescent SiC as white light emitting diode mediumSUN, J. W; JOKUBAVICIUS, V; LILJEDAHL, R et al.Thin solid films. 2012, Vol 522, pp 33-35, issn 0040-6090, 3 p.Conference Paper

ScAIN nanowires: A cathodoluminescence studyBOHNEN, T; YAZDI, G. R; YAKIMOVA, R et al.Journal of crystal growth. 2009, Vol 311, Num 11, pp 3147-3151, issn 0022-0248, 5 p.Article

Polytype stability in seeded sublimation growth of 4H-SiC boulesYAKIMOVA, R; SYVÄJÄRVI, M; IAKIMOV, T et al.Journal of crystal growth. 2000, Vol 217, Num 3, pp 255-262, issn 0022-0248Article

Microhardness of 6H-SiC epitaxial layers grown by sublimationKAKANAKOVA-GEORGIEVA, A; TRIFONOVA, E. P; YAKIMOVA, R et al.Crystal research and technology (1979). 1999, Vol 34, Num 8, pp 943-947, issn 0232-1300Article

Barrier height determination for n-type 4H-SiC schottky contacts made using various metalsYAKIMOVA, R; HEMMINGSSON, C; MACMILLAN, M. F et al.Journal of electronic materials. 1998, Vol 27, Num 7, pp 871-875, issn 0361-5235Article

Interface chemistry and electric characterisation of nickel metallisation on 6H-SiCMARINOVA, T; KRASTEV, V; HALLIN, C et al.Applied surface science. 1996, Vol 99, Num 2, pp 119-126, issn 0169-4332, 7 p.Article

Raman scattering study of crystal perfection of MOVPE-grown GaAsYAKIMOVA, R; PASKOVA, T; IVANOV, I et al.Semiconductor science and technology. 1993, Vol 8, Num 2, pp 179-184, issn 0268-1242Article

On the formation of the Sb_Ga heteroantisite in metalorganic vapor-phase epitaxial GaAs:SbYAKIMOVA, R; OMLING, P; YANG, B. H et al.Applied physics letters. 1991, Vol 59, Num 11, pp 1323-1325, issn 0003-6951Article

Effects of source material on epitaxial growth of fluorescent SiCJOKUBAVICIUS, V; HENS, P; LILJEDAHL, R et al.Thin solid films. 2012, Vol 522, pp 7-10, issn 0040-6090, 4 p.Conference Paper